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AP01L60ATのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP01L60AT |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP01L60ATダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP01L60AT
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
600
± 30
160
100
300
0.83
-55 to 150
-55 to 150
Value
150
Units
V
V
mA
mA
mA
W
℃
℃
Unit
℃/W
Data & specifications subject to change without notice
201023073-1/4
1 Page 1.5
T A =25 o C
1
10V
6.0V
5.5V
5.0V
0.5 V GS =4.5V
0
0 12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.4 0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP01L60AT
1
T A =150 o C
0.75
0.5
0.25
10V
5.0V
4.5V
V GS =4.0V
0
0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
I D =0.5A
2.4 V GS =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
150
3
2
1
-50 0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ AP01L60AT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP01L60AT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |