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AP01L60H-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP01L60H-HF |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP01L60H-HFダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP01L60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristics
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
600V
12Ω
1A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
G
DS
TO-251(J)
Rating
600
+30
1
0.8
3
29
0.232
0.5
1
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.3
62.5
110
Units
℃/W
℃/W
℃/W
Data & specifications subject to change without notice
1
201010134
1 Page 1.5
T C =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.5V
0.0
0 12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
1.3
1.1
0.9
0.7
0.5
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
1.0
T C =150 o C
0.8
0.5
0.3
AP01L60H/J-HF
10V
5.0V
4.5V
V G =4.0V
0.0
0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.5
150
3.0
2.5
2.0
-50
-25 0 25 50 75 100 125
T j , Junction Temperature ( o C )
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ AP01L60H-HF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP01L60H-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP01L60H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |