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AP01L60H-HF の電気的特性と機能

AP01L60H-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP01L60H-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP01L60H-HF Datasheet, AP01L60H-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP01L60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristics
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
600V
12Ω
1A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
G
DS
TO-251(J)
Rating
600
+30
1
0.8
3
29
0.232
0.5
1
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.3
62.5
110
Units
/W
/W
/W
Data & specifications subject to change without notice
1
201010134

1 Page





AP01L60H-HF pdf, ピン配列
1.5
T C =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.5V
0.0
0 12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
1.3
1.1
0.9
0.7
0.5
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
1.0
T C =150 o C
0.8
0.5
0.3
AP01L60H/J-HF
10V
5.0V
4.5V
V G =4.0V
0.0
0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.5
150
3.0
2.5
2.0
-50
-25 0 25 50 75 100 125
T j , Junction Temperature ( o C )
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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共有リンク

Link :


部品番号部品説明メーカ
AP01L60H-H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP01L60H-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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