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AP01L60HのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP01L60H |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP01L60Hダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP01L60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
ϰʳRepetitive Avalanche Rated
ϰʳFast Switching Speed
ϰʳSimple Drive Requirement
ϰ RoHS Compliant
Description
D
G
S
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
600V
12Ө
1A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25к
ID@TC=100к
IDM
PD@TC=25к
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
DS
TO-251(J)
Rating
600
±30
1
0.8
3
29
0.232
0.5
1
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/к
mJ
A
mJ
к
к
Max.
Max.
Value
4.3
110
Units
к/W
к/W
Data & specifications subject to change without notice
200629052-1/4
1 Page 1.5
T C =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.5V
0.0
0 12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
-50 0
50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP01L60H/J
1.0
T C =150 o C
0.8
0.5
0.3
10V
5.0V
4.5V
V G =4.0V
0.0
0
10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.5
150
3.0
2.5
2.0
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ AP01L60H データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP01L60AT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP01L60H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP01L60H-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP01L60H-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |