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AP01L60H の電気的特性と機能

AP01L60HのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP01L60H
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP01L60H Datasheet, AP01L60H PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP01L60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
ϰʳRepetitive Avalanche Rated
ϰʳFast Switching Speed
ϰʳSimple Drive Requirement
ϰ RoHS Compliant
Description
D
G
S
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
600V
12Ө
1A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25к
ID@TC=100к
IDM
PD@TC=25к
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
DS
TO-251(J)
Rating
600
±30
1
0.8
3
29
0.232
0.5
1
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/к
mJ
A
mJ
к
к
Max.
Max.
Value
4.3
110
Units
к/W
к/W
Data & specifications subject to change without notice
200629052-1/4

1 Page





AP01L60H pdf, ピン配列
1.5
T C =25 o C
1.0
10V
6.0V
5.5V
5.0V
0.5 V G =4.5V
0.0
0 12 24 36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
-50 0
50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
1
T j = 150 o C
0.1
T j = 25 o C
0.01
0
0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP01L60H/J
1.0
T C =150 o C
0.8
0.5
0.3
10V
5.0V
4.5V
V G =4.0V
0.0
0
10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.5
150
3.0
2.5
2.0
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4


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共有リンク

Link :


部品番号部品説明メーカ
AP01L60AT

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP01L60H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP01L60H-A-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
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AP01L60H-H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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