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AP01N40J の電気的特性と機能

AP01N40JのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP01N40J
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP01N40J Datasheet, AP01N40J PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP01N40J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
100% Avalanche Rated
Fast Switching Performance
Simple Drive Requirement
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
BVDSS
RDS(ON)
ID
400V
16Ω
0.5A
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±20
0.5
0.4
2
17.4
0.14
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
7.2
110
Units
/W
/W
201018072-1/4

1 Page





AP01N40J pdf, ピン配列
1.2
T C =25 o C
1
0.8
0.6
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.4
0.2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP01N40J
0.6
T C =150 o C
0.5
0.4
0.3
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.2
0.1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
150
2
1.6
1.2
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4


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共有リンク

Link :


部品番号部品説明メーカ
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP01N40H-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP01N40J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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