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AP01N40JのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP01N40J |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP01N40Jダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP01N40J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ 100% Avalanche Rated
▼ Fast Switching Performance
▼ Simple Drive Requirement
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
BVDSS
RDS(ON)
ID
400V
16Ω
0.5A
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±20
0.5
0.4
2
17.4
0.14
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
7.2
110
Units
℃/W
℃/W
201018072-1/4
1 Page 1.2
T C =25 o C
1
0.8
0.6
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.4
0.2
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP01N40J
0.6
T C =150 o C
0.5
0.4
0.3
10V
9.0V
8.0V
7.0V
V G = 6.0 V
0.2
0.1
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.5A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
150
2
1.6
1.2
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ AP01N40J データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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