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AP02N40I-HF の電気的特性と機能

AP02N40I-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP02N40I-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP02N40I-HF Datasheet, AP02N40I-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP02N40I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
400V
RDS(ON)
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
+30
1.6
1
3
27.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
V
V
A
A
A
W
Unit
/W
/W
Data & specifications subject to change without notice
1
201101051

1 Page





AP02N40I-HF pdf, ピン配列
3
T C =25 o C
2
1
10V
8.0V
7.0V
V G =6.0V
0
0 4 8 12 16 20 24 28 32
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
I D =1mA
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
6
5
4
3
T j = 150 o C
2
T j = 25 o C
1
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP02N40I-HF
2
T C =150 o C
1.6
1.2
10V
8 .0V
7 .0V
V G =6.0 V
0.8
0.4
0
0 5 10 15 20 25 30 35
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =0.7A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =1mA
1.6
150
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

Link :


部品番号部品説明メーカ
AP02N40I-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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