DataSheet.jp

K15J50D PDF Data sheet ( 特性 )

部品番号 K15J50D
部品説明 TK15J50D
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 


Total 6 pages
		

No Preview Available !

K15J50D Datasheet, K15J50D PDF,ピン配置, 機能
TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK15J50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: Yfs= 8.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9 MAX.
Unit: mm
Ф3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
15
60
210
360
15
21
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 ± 0.3
1.0
0.3
0.25
5.45 ± 0.2
5.45 ± 0.2
123
1: Gate
2: Drain (Heatsink)
3: Source
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.595
50
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.72 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2011-04-25

1 Page




ページ 合計 : 6 ページ
PDF
ダウンロード
[ K15J50D.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
K15J50D

TK15J50D

Toshiba Semiconductor
Toshiba Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap