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HGTG40N60B3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGTG40N60B3
部品説明 UFS Series N-Channel IGBT
メーカ Harris
ロゴ Harris ロゴ 



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HGTG40N60B3 Datasheet, HGTG40N60B3 PDF,ピン配置, 機能
HGTG40N60B3S E M I C O N D U C T O R
PRELIMINARY
May 1995
70A, 600V, UFS Series N-Channel IGBT
Features
• 70A, 600V at TC = +25oC
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150oC
• Short Circuit Rating
• Low Conduction Loss
Package
JEDEC STYLE TO-247
E
C
G
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage, RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TC = +125oC, RGE = 25Ω.
HGTG40N60B3
600
600
70
40
330
±20
±30
160A at 0.8 BVCES
290
2.33
-40 to +150
260
2
10
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
9-3
File Number 3943

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