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06N80C3 PDF Data sheet ( 特性 )

部品番号 06N80C3
部品説明 SPP06N80C3
メーカ Infineon
ロゴ Infineon ロゴ 



Total 10 pages
		

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06N80C3 Datasheet, 06N80C3 PDF,ピン配置, 機能
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPP06N80C3
800 V
0.9
31 nC
PG-TO220-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
SPP06N80C3
Package
PG-TO220-3
Marking
06N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.2 A, V DD=50 V
I D=6 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.91
page 1
Value
6
3.8
18
230
0.2
6
50
±20
±30
83
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2011-09-28

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