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AP9465AGJ の電気的特性と機能

AP9465AGJのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP9465AGJ
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP9465AGJ Datasheet, AP9465AGJ PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP9465AGH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
D BVDSS
40V
RDS(ON)
32mΩ
G ID 15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465AGJ) are available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S TO-252(H)
G
D
S
TO-251(J)
Rating
40
+20
15
9.8
50
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
10.0
62.5
110
Units
/W
/W
/W
1
200903092

1 Page





AP9465AGJ pdf, ピン配列
50
T C =25 o C
40
30
10V
7.0 V
5.0V
4.5 V
20
V G = 3.0 V
10
0
0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
I D =12A
T C =25 o C
36
32
28
24
20
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
T j =25 o C
8
4
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
40
T C =150 o C
30
20
10
AP9465AGH/J
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =12A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

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部品番号部品説明メーカ
AP9465AGH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP9465AGJ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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