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AP9965GEJのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP9965GEJ |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP9965GEJダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP9965GEH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
40V
28mΩ
27A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
40
+16
27
17
80
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.0
62.5
110
Units
℃/W
℃/W
℃/W
1
200903094
Downloaded from Elcodis.com electronic components distributor
1 Page 80
T C =25 o C
60
40
20
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I D =12A
T C =25 o C
50
30
10
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
25
20
15
10
T j =150 o C
T j =25 o C
5
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
Downloaded from Elcodis.com electronic components distributor
60
T C =150 o C
40
20
AP9965GEH/J
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =18A
V G =10V
1.6
1.2
0.8
0.4
25 50 75 100 125
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
150
40.0
30.0 V GS =4.5V
V GS =10V
20.0
10.0
0
10 20 30 40
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
50
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ AP9965GEJ データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP9965GEH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9965GEJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |