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AP9962AGH の電気的特性と機能

AP9962AGHのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP9962AGH
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP9962AGH Datasheet, AP9962AGH PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP9962AGH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
G
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maixmum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
32
20
120
27.8
0.22
-55 to 150
-55 to 150
Value
4.5
110
Units
V
V
A
A
A
W
W/
Unit
/W
/W
Data and specifications subject to change without notice
1
200810282

1 Page





AP9962AGH pdf, ピン配列
100
T C =25 o C
80
60
40
10V
7.0V
5.0V
4.5V
20
V G =3.0V
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
28
I D =16A
T C =25 o C
24
20
16
12
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
16
12
8
T j =150 o C
4
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP9962AGH
80
T C =150 o C
60
40
10V
7.0V
5.0V
4.5V
20
V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.4
1.2
1
0.8
0.6
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

Link :


部品番号部品説明メーカ
AP9962AGH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP9962AGH-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP9962AGH-HF-3

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics
AP9962AGJ-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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