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AP9967GH-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP9967GH-HF |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP9967GH-HFダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advanced Power
Electronics Corp.
AP9967GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
13.5mΩ
33A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=70℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
33
20.8
120
25
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
5
62.5
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201002231
1 Page 120
T C =25 o C
100
80
10V
7.0V
6.0V
5.0V
60
V G = 4.0 V
40
20
0
0 2 4 6 8 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
30
I D =12A
T C =25 o C
26
22
18
14
10
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
T j =25 o C
8
4
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
80
T C =150 o C
60
40
20
AP9967GH-HF
10V
7.0V
6.0V
5.0V
V G =4.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =18A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ AP9967GH-HF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP9967GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |