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AP02N90H-HF-3のメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP02N90H-HF-3 |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP02N90H-HF-3ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advanced Power
Electronics Corp.
AP02N90H/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Fast Switching Characteristics
Low On-resistance
RoHS-compliant, Halogen-free
G
D
S
BV DSS
RDS(ON)
ID
900V
7.2Ω
1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H)
The AP02N90H-HF-3 is in the TO-252 package which is widely preferred for
commercial and industrial surface mount applications such as medium-power
DC/DC converters. The through-hole TO-251 version (AP02N90J-HF-3) is
available where a small PCB footprint is required.
GD
S
Absolute Maximum Ratings
TO-251 (J)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
± 30
1.9
1.2
6
62.5
0.5
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Value
2
62.5
110
Unit
°C/W
°C/W
°C/W
Ordering Information
AP02N90H-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
AP02N90J-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201008115-3 1/6
1 Page Advanced Power
Electronics Corp.
Typical Electrical Characteristics
2.0
T C =25 o C
1.6
10V
8.0V
6.0V
5.0V
1.2
0.8
V G =4.5V
0.4
0.0
0 3 6 9 12 15 18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
-50 0 50 100
Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS
vs. Junction Temperature
2.0
1.5
T j =150 o C
1.0
T j =25 o C
0.5
0.0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP02N90H/J-HF-3
1.25
T C =150 o C
1.00
0.75
10V
8.0V
6.0V
5.0V
V G =4.5V
0.50
0.25
0.00
0
3 6 9 12 15
V DS , Drain-to-Source Voltage (V)
18
Fig 2. Typical Output Characteristics
2.8
I D = 0.85 A
2.4
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
1.2
0.8
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/6
3Pages Advanced Power
Electronics Corp.
Package Dimensions: TO-251
D
D1
E2
E1 E
A
c1
A1
B2
B1 F
ee
c
AP02N90H/J-HF-3
Millimeters
SYMBOLS
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
c 0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
E 6.70 7.00 7.30
E1 5.40 5.60 5.80
E2 1.30 1.50 1.70
e ---- 2.30 ----
F 7.00 8.30 9.60
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
Marking Information:
02N90J
YWWSSS
Product: AP02N90
Package Code
J = RoHS-compliant halogen-free TO-251
Date Code (YWWSSS)
Y : Last digit of the year
WW : Work week
SSS : Lot code sequence
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
6/6
6 Page | |||
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部品番号 | 部品説明 | メーカ |
AP02N90H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |