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PDF MC33153D Data sheet ( Hoja de datos )
| Número de pieza | MC33153D | |
| Descripción | IGBT driver | |
| Fabricantes | Art Chip | |
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The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control,
brushless dc motor control and uninterruptible power supplies.
Although designed for driving discrete and module 1 GBTs, this
device offers a cost effective solution for driving power
MOSFETS and Bipolar Transistors. Device protection features
include the choice of desaturation or overcurrent sensing and
undervoltage detection. These devices are available in dual-in-
line and surface mount packages and include the following
features:
z High Current Output Stage: 1.0A Source/2.0 A Sink
z Protection Circuits for Both Conventional and sense IGBTs
z Programmable Fault Blanking Time
z Protection against Overcurrent and Short Circuit
z Undervoltage Lockout Optimized for 1IGBT’s
z Negative Gate Drive Capability
z Cost Effectively Drives Power MOSFETs and Bipolar
Transistors
Representative Block Diagram
MC33153P/D
P SUFFIX
PLASTIC PACKAGE
CASE 626
(DIP-8)
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO-8)
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This device contains 133 active transistors.
1
1 page  
Figure 3. Input Threshold Voltage
Versus Temperature
MC33153P/D
Figure 4. Input Threshold Voltage
Versus Supply Voltage
TA AMBIENT TEMPERATURE ( )
Figure 5. Drive Output Low State Voltage
Versus Temperature
Vcc, SUPPLY VOLTAGE (V)
Figure 6. Drive Output Low State Voltage
Versus Sink Current
TA. AMBIENT TEMPERATURE ( )
Figure 7. Drive Output High State Voltage
Versus Temperature
ISink, OUTPUT SINK CURRENT (A)
Figure 8. Drive Output High State Voltage
Versus Source Current
TA, AMBIENT TEMPERATURE ( )
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ISource, OUTPUT SOURCE CURRENT (A)
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5 Page 
MC33153P/D
PROTECTION CIRCUITRY
Desaturation protection
Bipolar Power circuits have commonly used what is known as
“Desaturation Detection”. This involves monitoring the collector
voltage and turning off the device if this voltage rises above a
certain limit. A bipolar transistor will only conduct a certain
amount of current for a given base drive. When the base is
overdriven, the device is in saturation. When the collector
current rises above the knee, the device pulls out of saturation.
The maximum current the device will conduct in the linear region
is a function of the base current and the dc current gain (hFE) of
the transistor.
The output characteristics of an IGBT are similar to a Bipolar
device. However, the output current is a function of gate voltage
instead of current. The maximum current depends on the gate
voltage and the device type. IGBTs tend to have a very high
transconductance and a much higher current density under a
short circuit than a bipolar device. Motor control IGBTs are
designed for a lower current density under shorted conditions
and a longer short circuit survival time.
The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33153 has
a Fault Blanking/Desaturation Comparator which senses the
collector voltage and provides an output indicating when the
device is not fully saturated. Diode D1 is an external high
voltage diode with a rated voltage comparable to the power
device. When theIGBT is “on” and saturated, D1 will pull down
the Voltage on the Fault blanking/Desaturation Input. When the
IGBT pulls out of saturation or is “”off, the current source will pull
up the input and trip the comparator. The comparator threshold
is 6.5V. allowing a maximum on-voltage of about 5.8V.
A fault exists when the gate input is high and VCE is greater
than the maximum allowable VCE (sat). The output of the
desaturation Comparator is ANDed with the gate input signal
and fed into the Short Circuit and Overcurrent Latches. The
Overcurrent Latch will turn-off the IGBT for the remainder of the
cycle when a fault is detected. When input goes high, both
latches are reset. The reference voltage is tied to the Kelvin
Ground instead of the VEE to make the threshold independent of
negative gate bias. Note that for proper operation of the
Desaturation Comparator and the Fault Output, the Current
Sense Input must be biased above the Overcurrent and Short
Circuit Comparator thresholds. This can be accomplished by
connecting Pin 1 to Vcc.
Figure 33.Desaturation Detection
The MC33153 also features a programmable fault blanking
time. During turn-on, the IGBT must clear the opposing
free-wheeling diode. The collector voltage will remain high until
the diode is cleared. Once the diode has been cleared, the
voltage will come down quickly to the VCE (sat) of the device.
Following turn-on, there is normally considerable ringing on the
collector due to the COSS capacitance of the IGBTs and the
parasitic wiring inductance. The fault signal from the
Desaturation Comparator must be blanked sufficiently to allow
the diode to be cleared and the ringing to settle out.
The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input is
switched high, the clamp transistor will turn “off”, allowing the
internal current source to charge the blanking capacitor. The
time required for the blanking capacitor to charge up from the
on-voltage of the internal NPN transistor to the trip voltage of the
comparator is the blanking time.
If a short circuit occurs after the IGBT is turned on and
saturated, the delay time will the time required for the current
source to charge up the blanking capacitor from the VCE(sat)
level of the IGBT to the trip voltage of the comparator. Fault
blanking can be disabled by leaving Pin 8 unconnected.
Sense IGBT Protection
Another approach to protecting the IGBTs is to sense the emitter
current using a current shunt or Sense IGBTs. This method has
the advantage of being able to use high gain IGBTs which do not
have any inherent short circuit capability. Current sense IGBTs
work as well as current sense MOSFETs in most circumstances.
However, the basic problem of working with very low sense
voltages still exists. Sense IGBTs sense current through the
channel and are therefore linear with respect to the collector
current. Because IGBTs have a very low incremental
on-resistance, sense IGBTs behave much like low-on resistance
current sense MOSFETs. The output voltage of a properly
terminated sense IGBT is very low, normally less than 100mV.
The sense IGBT approach requires fault blanking to prevent
false tripping during turn-on. The sense IGBT also requires that
the sense signal is ignored while the gate is low. This is because
the mirror output normally produces large transient voltages
during both turn –on and turn-off due to the collector to mirror
capacitance. With non-sensing types of IGBTs, a low resistance
current shunt (5.0 to 50mΩ) can be used to sense the emitter
current. When the output is an actual short circuit, the
inductance will be very low. Since the blanking circuit provides a
fixed minimum on-time, the peak current under a short circuit
can be very high. A short circuit discern function is implemented
by the second comparator which has a higher trip voltage. The
short circuit signal is latched and appears at the Fault Output.
When a short circuit is detected, the IGBT should be turned-off
for several milliseconds allowing it to cool down before it is
turned back on. The sense circuit is very similar to the
desaturation circuit. It is possible to build a combination circuit
that provides protection for both short circuit capable IGBTs and
Sense IGBTs.
www.artschip.com
11
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| PDF Descargar | [ Datasheet MC33153D.PDF ] | |
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