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AP9476GM-HF-3のメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP9476GM-HF-3 |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP9476GM-HF-3ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP9476GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low Gate Charge
BV DSS
60V
Fast Switching Performance
RDS(ON)
21mΩ
RoHS-compliant, halogen-free
G
ID 7.8A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9476GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
60
±20
7.8
6.3
40
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP9476GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200806091-3 1/5
1 Page Advanced Power
Electronics Corp.
Typical Electrical Characteristics
40
T A =25 o C
10V
7.0 V
6.0 V
30 5.0 V
20
10
V G = 4.0 V
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
ID=5A
T A =25 ° C
40
30
20
10
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance vs. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
1.2
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP9476GM-HF-3
40
T A = 150 o C
30
10V
7.0 V
6 .0 V
5.0 V
20
V G = 4 .0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
ID=7A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ AP9476GM-HF-3 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP9476GM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |