DataSheet.jp

AP6618GM-HF-3 の電気的特性と機能

AP6618GM-HF-3のメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP6618GM-HF-3
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




このページの下部にプレビューとAP6618GM-HF-3ダウンロード(pdfファイル)リンクがあります。
Total 5 pages

No Preview Available !

AP6618GM-HF-3 Datasheet, AP6618GM-HF-3 PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP6618GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low On-resistance
BV DSS
30V
Fast Switching Performance
RDS(ON)
30m
RoHS-compliant, halogen-free
G
ID 7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP6618GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
30
+20
7
5.8
30
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP6618GM-HF-3TR
RoHS-compliant SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201004132-3 1/5

1 Page





AP6618GM-HF-3 pdf, ピン配列
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
36
T A =25 o C
10V
8.0V
6.0V
5.0V
24 V G =4.5V
12
0
0235
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
80
I D =5A
T A =25 ° C
70
60
50
40
30
20
0 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
10
1
T j =150 o C
0.1
T j =25 o C
0.01
0
0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP6618GM-HF-3
36
T A =150 o C
10V
8.0V
6.0V
5.0V
24
V G =4.5V
12
0
02356
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =7A
V G =10V
1.4
0.8
0.2
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.4
2
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ AP6618GM-HF-3 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
AP6618GM-HF-3

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap