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Número de pieza | TPC8221-H | |
Descripción | MOSFETs | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPC8221-H (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8221-H
1. Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate change: QSW = 3.5 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPC8221-H
SOP-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
1 2010-07-08
Rev.1.0
1 page 7. Marking(Note)
TPC8221-H
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
5 2010-07-08
Rev.1.0
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TPC8221-H.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPC8221-H | MOSFETs | Toshiba Semiconductor |
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