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Datasheet TK39J60W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK39J60W | MOSFET, Transistor TK39J60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK39J60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3 |  Toshiba Semiconductor | mosfet |
| 2 | TK39J60W5 | MOSFET, Transistor TK39J60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK39J60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 150 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS Easy to con | Toshiba Semiconductor | mosfet |
TK3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK30A06J3A | Field Effect Transistor TK30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK30A06J3A
Switching Regulator Applications
z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V Toshiba Semiconductor transistor | | |
| 2 | TK30A06N1 | MOSFET, Transistor TK30A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V Toshiba Semiconductor mosfet | | |
| 3 | TK30E06N1 | MOSFET, Transistor TK30E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V Toshiba Semiconductor mosfet | | |
| 4 | TK30J25D | MOSFET, Transistor TK30J25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK30J25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, I Toshiba Semiconductor mosfet | | |
| 5 | TK30S06K3L | MOSFET, Transistor TK30S06K3L
MOSFETs Silicon N-channel MOS (U-MOS )
TK30S06K3L
1. Applications
• • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (m Toshiba Semiconductor mosfet | | |
| 6 | TK31A60W | Silicon N-Channel MOS TK31A60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3  Toshiba data | | |
| 7 | TK31E60W | Silicon N-Channel MOS TK31E60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31E60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3 Toshiba data | |
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