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IRF6216のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF6216 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6216ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 94297
SMPS MOSFET
Applications
l Reset Switch for Active Clamp Reset
DC-DC converters
VDSS
-150V
IRF6216
HEXFET® Power MOSFET
RDS(on) max
ID
0.240Ω@VGS =-10V -2.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
A
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
02/12/02
1 Page 100
TOP
VGS
-15V
-12V
-10V
-8.0V
-7.0V
10
BOTTOM
1
0.1
0.01
0.1
20µs PULSE WIDTH
T J= 25 ° C
1 10 100
Fig 1. Typical Output Characteristics
100
TOP
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
BOTTOM -5.0V
10
IRF6216
-5.0V
1
D
0.1
0.1
20µs PULSE WIDTH
T J= 150 ° C
1 10
-V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25 ° C
10 TJ = 150 ° C
1
0.1
5.0
V DS= -50V
20µs PULSE WIDTH
5.5 6.0 6.5 7.0 7.5 8.0
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5
I D = -2.2A
2.0
1.5
1.0
0.5
V GS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF6216
0.23 1.50
0.22
VGS = -10V
0.21
0.20
1.00
0.50
ID = -2.2A
0.19
0 2 4 6 8 10 12 14 16 18
Fig 12. On-Resistance Vs. Drain Current
0.00
4.5
6.0 7.5 9.0 10.5 12.0 13.5 15.0
-VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-VGS
QGS
-
+VDS
VG
QG
QGD
VGS
-3mA
Charge
IG ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
VD S L
IAS
R G D .U.T
VD D
-20V
tp
IA S
0.01Ω
DR IVER
A
tp
V(BR)DSS
15V
500
ID
TOP
-1.8A
-3.2A
400 BOTTOM -4.0A
300
200
100
0
25 50 75 100
Starting Tj, Junction Temperature
125
( °C)
150
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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