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IRFL9014 の電気的特性と機能

IRFL9014のメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFL9014
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRFL9014 Datasheet, IRFL9014 PDF,ピン配置, 機能
www.vishay.com
IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
-60
VGS = -10 V
12
3.8
5.1
Single
0.50
S
SOT-223
D
S
D
G
Marking code: FE
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL9014-GE3
IRFL9014PbF
SiHFL9014-E3
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
SiHFL9014TR-GE3
IRFL9014TRPbF a
SiHFL9014T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature) d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
-60
± 20
-1.8
-1.1
-14
0.025
0.017
140
-1.8
0.31
3.1
2.0
-4.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-1686-Rev. F, 18-Aug-14
1
Document Number: 91195
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFL9014 pdf, ピン配列
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFL9014, SiHFL9014
Vishay Siliconix
VGS
Top -15 V
101
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
10-1
10-1
91195_01
20 µs Pulse Width
TC = 25 °C
100 101
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
2.5
ID = - 6.7 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91195_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
101
100
10-1
VGS
Top -15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
20 µs Pulse Width
TC = 150 °C
101
91195_02
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
500 Crss = Cgd
Coss = Cds + Cgd
400
300 Ciss
Coss
200
100
Crss
0
100
101
91195_05
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101 25 °C
150 °C
100
20
ID = -6.7 A
16
12
VDS = -48 V
VDS = -30 V
10-1
91195_03
4
20 µs Pulse Width
VDS = - 25 V
5 6 7 8 9 10
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
8
4
0
0
91195_06
For test circuit
see figure 13
4 8 12 16
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-1686-Rev. F, 18-Aug-14
3
Document Number: 91195
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFL9014 電子部品, 半導体
www.vishay.com
D.U.T.
+
-
IRFL9014, SiHFL9014
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
ISD controlled by duty factor “D”
D.U.T. - device under test
- VDD
Note
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91195.
S14-1686-Rev. F, 18-Aug-14
6
Document Number: 91195
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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