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P2904BD PDF Data sheet ( 特性 )

部品番号 P2904BD
部品説明 N-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 



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P2904BD Datasheet, P2904BD PDF,ピン配置, 機能
NIKO-SEM
N-Channel Logic Level Enhancement
P2904BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead- Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ
ID
25A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Avalanche Current
Avalanche Energy 2
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
40
±20
25
20
75
27
37
30
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
4.1
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
40
2 2.4
3
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 125 °C
1
µA
10
VDS = 5V, VGS = 10V
75
A
REV 1.0
Oct-14-2010
1

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