DataSheet.jp

P2904BD の電気的特性と機能

P2904BDのメーカーはNIKO-SEMです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 P2904BD
部品説明 N-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ NIKO-SEM
ロゴ NIKO-SEM ロゴ 




このページの下部にプレビューとP2904BDダウンロード(pdfファイル)リンクがあります。
Total 4 pages

No Preview Available !

P2904BD Datasheet, P2904BD PDF,ピン配置, 機能
NIKO-SEM
N-Channel Logic Level Enhancement
P2904BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead- Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ
ID
25A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Avalanche Current
Avalanche Energy 2
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
40
±20
25
20
75
27
37
30
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
4.1
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
40
2 2.4
3
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 125 °C
1
µA
10
VDS = 5V, VGS = 10V
75
A
REV 1.0
Oct-14-2010
1

1 Page





P2904BD pdf, ピン配列
NIKO-SEM
N-Channel Logic Level Enhancement
P2904BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead- Free
Output Characteristics
60
VGS = 10V
VGS = 7V
50
40
Transfer Characteristics
60
50
40
30 30
20
VGS = 5V
10
0
0 12 3 4
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) 2.0
5
RDS(ON) 1.8
RDS(ON) 1.6
RDS(ON) 1.4
RDS(ON) 1.2
RDS(ON) 1.0
RDS(ON) 0.8
RDS(ON)
RDS(ON)
0.6 VGS=10V
ID=10A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
20
TJ=125° C
10
TJ=25° C
TJ=-20° C
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
1.50E+03
7.0
8.0
1.20E+03
9.00E+02
Ciss
6.00E+02
3.00E+02
0.00E+00
0
Coss
Crss
5 10 15 20 25
VDS, Drain-To-Source Voltage(V)
30
Gate charge Characteristics
10 Characteristics
8
ID=10A
VDS=20V
6
4
2
0
0 4 8 12 16 20
Qg , Total Gate Charge(nC)
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
TJ =150° C
TJ =25°C
1.0E-02
1.0E-03
1.0E-04
0.2
0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.0
Oct-14-2010
3


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ P2904BD データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
P2904BD

N-Channel Enhancement Mode MOSFET

UNIKC
UNIKC
P2904BD

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM
NIKO-SEM


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap