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PDF HCTS75MS Data sheet ( Hoja de datos )
| Número de pieza | HCTS75MS | |
| Descripción | Radiation Hardened Dual 2-Bit Bistable Transparent Latch | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HCTS75MS
September 1995
Radiation Hardened
Dual 2-Bit Bistable Transparent Latch
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS75MS is a Radiation Hardened dual 2-bit
bistable transparent latch. Each of the two latches are controlled
by a separate enable input (E) which are active low. E low latches
the output state.
The HCTS75MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS75MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
HCTS75DMSR
HCTS75KMSR
HCTS75D/
Sample
HCTS75K/
Sample
HCTS75HMSR
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
-55oC to +125oC Intersil Class
S Equivalent
16 Lead SBDIP
-55oC to +125oC Intersil Class 16 Lead Ceramic
S Equivalent Flatpack
+25oC
Sample
16 Lead SBDIP
+25oC
+25oC
Sample
Die
16 Lead Ceramic
Flatpack
Die
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
Q0 1 1
D0 1 2
D1 1 3
E2 4
VCC 5
D0 2 6
D1 2 7
Q1 2 8
16 1 Q0
15 1 Q1
14 1 Q1
13 1 E
12 GND
11 2 Q0
10 2 Q0
9 2 Q1
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
Q0 1
D0 1
D1 1
E2
VCC
D0 2
D1 2
Q1 2
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
1 Q0
1 Q1
1 Q1
1E
GND
2 Q0
2 Q0
2 Q1
Functional Diagram
2(6)
D0
13(4)
E
LATCH 0
DQ
LE LE
16(10
1(11
14(8
3(7)
D1
5 VCC
12 GND
LE LE
DQ
LATCH 1
TRUTH TABLE
15(9
INPUTS
DE
LH
HH
XL
OUTPUTS
QQ
LH
HL
Q0 Q0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
470
Spec Number 518625
File Number 3189.1
1 page  
Specifications HCTS75MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
Interim Test III (Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTES:
1. Alternate group A inspection in accordance with method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
READ AND RECORD
PRE RAD
POST RAD
1, 9 Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
1, 8, 9, 10, 11, 14, 15, 16
2, 3, 4, 6, 7, 12, 13
-
5
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
1, 8, 9, 10, 11, 14, 15, 16
12
- 2, 3, 4, 5, 6, 7, 13
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
12
1, 8, 9, 10, 11, 14, 15, 16
5
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in
OSCILLATOR
50kHz
25kHz
--
--
4, 13
2, 3, 6, 7
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
1, 8, 9, 14, 15, 16
12
2, 3, 4, 5, 6, 7, 10, 11, 13
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group
E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518625
474
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