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PDF AP9579GJ-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9579GJ-HF | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9579GJ-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
S
The TO-251 package is widely preferred for all commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
BVDSS
RDS(ON)
ID
GD
S
-60V
25mΩ
-45A
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
+20
-45
-28.7
-160
89.3
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
oC
oC
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
110
Units
oC/W
oC/W
1
201101211
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9579GJ-HF.PDF ] | |
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