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PDF AP9930GM-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP9930GM-HF-3 | |
| Descripción | Quad Complementary N and P-channel Enhancement-mode Power MOSFETs | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9930GM-HF-3
Quad Complementary N and P-channel
Enhancement-mode Power MOSFETs
Simple Drive Requirement
Low On-resistance
Full Bridge Applications
RoHS-compliant, halogen-free
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N-CH
N2G
N1S/N2S
N1D/P1D
N1G
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
33mΩ
5.5A
-30V
55mΩ
-4.1A
Advanced Power MOSFETs from APEC provide the designer with the best
P1S
combination of fast switching, low on-resistance and cost-effectiveness.
P1G
The AP9930GM-HF-3 is in a standard SO-8 package, which is widely
used for commercial and industrial surface-mount applications, and is
well suited for applications such as DC and servo motor drives.
P1N1D
P2S
P2G
P2N2D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID at TA=25°C
ID at TA=70°C
IDM
PD at TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
N1G
N1S
Rating
N-channel P-channel
30 -30
±20 ±20
5.5 -4.1
4.4 -3.3
20 -20
1.38
0.011
-55 to 150
-55 to 150
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
90
N2G
N2S
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP9930GM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200805154-3 1/8
1 page  
Advanced Power
Electronics Corp.
AP9930GM-HF-3
Typical N-channel Electrical Characteristics (cont.)
12
I D =5A
V DS =15V
10
f=1.0MHz
1000
C iss
8 C oss
6 100
C rss
4
2
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1
10ms
0.1 T A =25 o C
Single Pulse
100ms
1s
DC
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186°C/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP9930GM-HF-3.PDF ] | |
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