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Datasheet AP2606AGY-HF PDF ( 特性, スペック, ピン接続図 )

部品番号 AP2606AGY-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 
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AP2606AGY-HF Datasheet, AP2606AGY-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP2606AGY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial applications.
G
30V
28mΩ
7A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
7
5.6
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201009022

1 Page



AP2606AGY-HF pdf, ピン配列
40
T A =25 o C
30
20
10
10V
7.0V
6.0V
5.0V
V G =4.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
I D = 5A
T A =25 o C
40
30
20
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
T A =150 o C
30
AP2606AGY-HF
10V
7.0V
6.0V
5.0V
20 V G =4.0V
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =7A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
I D =250uA
1.2
150
1
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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