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AP2606AGY-HF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AP2606AGY-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 

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AP2606AGY-HF Datasheet, AP2606AGY-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP2606AGY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial applications.
G
30V
28mΩ
7A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
7
5.6
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201009022

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
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