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NVD5807N の電気的特性と機能

NVD5807NのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 NVD5807N
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NVD5807N Datasheet, NVD5807N PDF,ピン配置, 機能
NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable − NVD5807N
These Devices are Pb−Free and are RoHS Compliant
Applications
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
23
16
33
45
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 23 A
Single Pulse Drain−to−Source Avalanche
EAS 29.4 mJ
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
4.5 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
37 mW @ 4.5 V
31 mW @ 10 V
D
ID MAX
16 A
23 A
G
S
N−CHANNEL MOSFET
44
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
2
IPAK
3 CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5807N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 5
1
Publication Order Number:
NTD5807N/D

1 Page





NVD5807N pdf, ピン配列
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
45
10 V
40
35
VGS = 5 V
TJ = 25°C
4.5 V
30 4.2 V
25 4.0 V
20 3.8 V
15
3.4 V
10
5
0
012
34
3.0 V
56
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
50
VDS 10 V
40
30
TJ = 25°C
20
TJ = 150°C
10
0 TJ = −55°C
23 4 5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.025
0.023
VGS = 10 V
0.021
0.019
0.017
0.015
5
10
TJ = 25°C
15
20
0.040
0.038
0.036
0.034
0.032
0.030
0.028
0.026
0.024
0.022
0.020
0.018
0.016
25 5
TJ = 25°C
10 15
VGS = 4.5 V
VGS = 10 V
20 25 30 35 40 45
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7 ID = 5 A
1.6 VGS = 10 V
1.5
10,000
VGS = 0 V
1,000
TJ = 150°C
1.4 100
1.3
1.2
1.1 10
1.0 TJ = 25°C
0.9 1.0
0.8
0.7 0.1
−50 −25 0 25 50 75 100 125 150 175
2
12
22 32 42
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3


3Pages


NVD5807N 電子部品, 半導体
NTD5807N, NVD5807N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
L3
L4
b2
e
E
b3
4
12 3
C
A
A
B c2
D
DETAIL A
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
bc
0.005 (0.13) M C
L2
GAUGE
PLANE
H
C
SEATING
PLANE
L
L1
A1
DETAIL A
ROTATED 905 CW
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.108 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
3.00
0.118
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
1.60
0.063
6.17
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6

6 Page



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部品番号部品説明メーカ
NVD5807N

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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