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Número de pieza | SSM6J214FE | |
Descripción | Field Effect Transistor Silicon | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6J214FE (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J214FE
○ Power Management Switch Applications
• 1.8 V drive
• Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID (Note 1)
IDP (Note 1)
PD (Note 2)
t = 10s
Tch
Tstg
Rating
-30
± 12
-3.6
-7.2
500
700
150
−55 to 150
Unit
V
V
A
mW
°C
°C
ES6
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1J
reliability significantly even if the operating conditions (i.e.
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
654
PT
123
Equivalent Circuit
65 4
1 23
1
http://store.iiic.cc/
2011-01-25
1 page 1000
rth – tw
100
10
1
0.001
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm
×
1.6
mm,
Cu
Pad:
645
mm2)
0.01
0.1
1
10 100 1000
Pulse Width tw (s)
SSM6J214FE
600
500
400
300
200
100
0
0
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm2)
50 100
Ambient temperature Ta (°C)
150
5
http://store.iiic.cc/
2011-01-25
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6J214FE.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6J214FE | Field Effect Transistor Silicon | Toshiba Semiconductor |
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