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Número de pieza | SSM3J132TU | |
Descripción | Field Effect Transistor Silicon | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM3J132TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SSM3J132TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J132TU
○ Power Management Switch Applications
• 1.2-V drive
• Low ON-resistance: RDS(ON) = 94 mΩ (max) (@VGS = -1.2 V)
RDS(ON) = 39 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 29 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 21 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 17 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD (Note 1)
t<1s
Tch
Tstg
Rating
-12
±6
-5.4
-10.8
500
1000
150
-55 to 150
Unit
V
V
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Marking
3
Equivalent Circuit (top view)
3
JJK
12
12
Start of commercial production
2011-02
1 2014-03-01
1 page rth – tw
600
b
a
100
10
Single pulse
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.36 mm2×3)
1
0.001 0.01
0.1
1
10 100 600
Pulse Width tw (s)
SSM3J132TU
PD – Ta
1000 Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
800
600
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2014-03-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM3J132TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM3J132TU | Field Effect Transistor Silicon | Toshiba Semiconductor |
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