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IRF3205 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF3205
部品説明 N-Channel Power MOSFET
メーカ nELL
ロゴ nELL ロゴ 



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IRF3205 Datasheet, IRF3205 PDF,ピン配置, 機能
SEMICONDUCTOR
IRF3205 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(110A, 55Volts)
DESCRIPTION
The Nell IRF3205 is a three-terminal silicon
device with current conduction capability
of 110A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 0.010Ω @ VGS = 10V
Ultra low gate charge(150nC max.)
Low reverse transfer capacitance
(CRSS = 210pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF3205A)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
110
75
55
0.010 @ VGS = 10V
150
G
(Gate)
D
G
D
S
TO-263(D2PAK)
(IRF3205H)
D (Drain)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
55
55 V
VGS Gate to Source voltage
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
110
80
A
390
IAR Avalanche current(Note 2)
EAR Repetitive avalanche energy(Note 2)
62
20 mJ
dv/dt
Peak diode recovery dv/dt(Note 3)
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
200 W
1.3 W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.ISD ≤ 62A, di/dt ≤ 207A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
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