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IRFB3004GPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB3004GPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB3004GPbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD - 96237
IRFB3004GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.4mΩ
1.75mΩ
c340A
S ID (Package Limited) 195A
D
DS
G
TO-220AB
IRFB3004GPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
jkJunction-to-Case
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
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D
Drain
Max.
340
240
195
1310
380
2.5
± 20
4.4
-55 to + 175
300
x x10lbf in (1.1N m)
S
Source
Units
A
W
W/°C
V
V/ns
°C
300
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
mJ
A
mJ
Units
°C/W
1
06/29/09
1 Page 10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
100 4.5V
10
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
12345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
IRFB3004GPbF
4.5V
100
10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 187A
12.0
10.0
8.0
VDS= 32V
VDS= 20V
6.0
4.0
2.0
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB3004GPbF
4.5
4.0
3.5
3.0
2.5 ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
10
IF = 78A
9 VR = 34V
8 TJ = 25°C
TJ = 125°C
7
6
5
4
3
2
100 200 300 400 500
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
11
10 IF = 117A
9
VR = 34V
TJ = 25°C
8 TJ = 125°C
7
6
5
4
3
2
1
100 200 300 400 500
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
400
IF = 117A
350 VR = 34V
300 TJ = 25°C
TJ = 125°C
250
350
IF = 78A
300 VR = 34V
TJ = 25°C
250 TJ = 125°C
200
150
100
50
100 200 300 400 500
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
200
150
100
50
0
100
200 300 400
diF /dt (A/µs)
500
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFB3004GPbF | Power MOSFET ( Transistor ) | International Rectifier |