HCTS30D Datasheet PDF - Intersil Corporation
| Part Number | HCTS30D | |
| Description | Radiation Hardened 8-Input NAND Gate | |
| Manufacturers | Intersil Corporation | |
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HCTS30MS
August 1995
Radiation Hardened
8-Input NAND Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1
B2
C3
D4
14 VCC
13 NC
12 H
11 G
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
E5
F6
GND 7
10 NC
9 NC
8Y
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS30MS is a Radiation Hardened 8-Input
NAND Gate. A high on all input forces the output to a low
state.
The HCTS30MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
A
B
C
D
E
F
GND
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
1 14
2 13
3 12
4 11
5 10
69
78
VCC
NC
H
G
NC
NC
Y
Ordering Information
PART NUMBER
HCTS30DMSR
HCTS30KMSR
HCTS30D/Sample
HCTS30K/Sample
HCTS30HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
440
Spec Number 518639
File Number 3056.1
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Specifications HCTS30MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
Noise Immunity
Functional Test
Input to Output
SYMBOL
(NOTES 1, 2)
CONDITIONS
FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
TPHL VCC = 4.5V
TPLH VCC = 4.5V
TEMPERATURE
+25oC
200K RAD
LIMITS
MIN MAX UNITS
---
+25oC
+25oC
2 23 ns
2 25 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC 5 3µA
IOL/IOH
5 -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate group A inspection in accordance with Method 5005 of MIL-STD-883 may be exercised.
Spec Number 518639
444
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| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HCTS30D.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| HCTS30D | The function is Radiation Hardened 8-Input NAND Gate. Intersil Corporation | |
| HCTS30DMSR | The function is Radiation Hardened 8-Input NAND Gate. Intersil Corporation | |
| HCTS30HMSR | The function is Radiation Hardened 8-Input NAND Gate. Intersil Corporation | |
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