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HCTS193DMSR の電気的特性と機能

HCTS193DMSRのメーカーはIntersil Corporationです、この部品の機能は「Radiation Hardened Synchronous 4-Bit Up/Down Counter」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCTS193DMSR
部品説明 Radiation Hardened Synchronous 4-Bit Up/Down Counter
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HCTS193DMSR Datasheet, HCTS193DMSR PDF,ピン配置, 機能
HCTS193MS
September 1995
Radiation Hardened
Synchronous 4-Bit Up/Down Counter
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS193MS is a Radiation Hardened 4-bit binary
UP/DOWN synchronous counter.
Presetting the counter to the number on the preset data inputs
(P0 - P3) is accomplished by a low on the asynchronous parallel
load input (PL). The counter is incremented on the low to high
transition of the clock-up input (high on the clock-down),
decremented on the low to high transition of the clock-down input
(high on the clock-up). A high level on the MR input overrides any
other input to clear the counter to zero. The Terminal Count Up
goes low half a clock period before the zero count is reached and
returns high at the maximum count. The Terminal Count Down
mode goes low half a clock period before the maximum count
and returns high at the maximum count.
P1
Q1
Q0
CPD
CPU
Q2
Q3
GND
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
P1 1
Q1 2
Q0 3
CPD 4
CPU 5
Q2 6
Q3 7
GND 8
16 VCC
15 P0
14 MR
13 TCD
12 TCU
11 PL
10 P2
9 P3
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
The HCTS193MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS193MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
VCC
P0
MR
TCD
TCU
PL
P2
P3
Ordering Information
PART NUMBER
HCTS193DMSR
HCTS193KMSR
HCTS193D/Sample
HCTS193K/Sample
HCTS193HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
592
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Spec Number 518620
File Number 3066.1

1 Page





HCTS193DMSR pdf, ピン配列
Specifications HCTS193MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.80V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOL = -50µA, VIL = 0.80V
VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 40 µA
- 750 µA
4.8 - mA
4.0 - mA
-4.8 - mA
-4.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
V
V
µA
µA
-
Spec Number 518620
594


3Pages


HCTS193DMSR 電子部品, 半導体
Specifications HCTS193MS
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER
ICC
IOL/IOH
GROUP B
SUBGROUP
5
5
DELTA LIMIT
12µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE: 1. Alternate Group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
NOTE: 1. Except FN test which will be performed 100% Go/No-Go.
READ AND RECORD
PRE RAD
POST RAD
1, 9 Table 4 (Note 1)
TABLE 8. DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
2, 3, 6, 7, 12, 13
1, 4, 5, 8 - 11, 14, 15
-
16
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
2, 3, 6, 7, 12, 13
8
- 1, 4, 5, 9 - 11, 14 - 16
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
1, 8 - 10, 14, 15
2, 3, 6, 7, 12, 13
4, 11, 16
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in.
OSCILLATOR
50kHz
25kHz
--
--
5-
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
2, 3, 6, 7, 12, 13
8
1, 4, 5, 9 - 11, 14 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group
E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518620
597

6 Page



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部品番号部品説明メーカ
HCTS193DMSR

Radiation Hardened Synchronous 4-Bit Up/Down Counter

Intersil Corporation
Intersil Corporation


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