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GT10G131のメーカーはToshiba Semiconductorです、この部品の機能は「Insulated Gate Bipolar Transistor」です。 |
部品番号 | GT10G131 |
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部品説明 | Insulated Gate Bipolar Transistor | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとGT10G131ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak collector current: IC = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Collector power
dissipation(t=10 s)
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
VCES
VGES
VGES
ICP
PC (1)
PC (2)
Tj
Tstg
400
±6
±8
200
1.9
1.0
150
−55~150
V
V
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1.2.3 Emitter
4 Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
Rth (j-a) (1)
Rth (j-a) (2)
Marking (Note 3)
Rating
65.8
125
Unit
°C/W
°C/W
1234
10G131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
1 Page GT10G131
Caution on handling
This device is MOS gate type. Therefore , please care of a protection from ESD in your handling .
Caution in design
You should be design dV/dt value is below 400 V/μs when IGBT turn off.
●definition of dv/dt
The slope of vce from 30v to 90v (attached figure.1)
dv/dt = (90V-30V) / (⊿t)
= 60V / ⊿t
●waveform
IC(begin)
VCE
IC
●waveform (expansion)
IC(end)
0V, 0A
dv/dt period
90V
30V
⊿t
VCE
3 2006-11-02
3Pages Minimum gate drive area
240
200
Tc = 25°C
70
160
120
80
40
0
02468
Gate-emitter voltage VGE (V)
GT10G131
Maximum operating area
800
600
400
VCM = 350 V
200 Tc <= 70°C
VGE = 4.0 V
10 Ω <= RG <= 300 Ω
0
0 40 80 120 160 200
Peak collector current ICP (A)
240
6 2006-11-02
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ GT10G131 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GT10G131 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |