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TPC8229-HのメーカーはToshibaです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | TPC8229-H |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | Toshiba | ||
ロゴ | |||
このページの下部にプレビューとTPC8229-Hダウンロード(pdfファイル)リンクがあります。 Total 9 pages
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8229-H
1. Applications
• DC-DC Converters
• CCFL Inverters
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 2.4 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPC8229-H
SOP-8
1, 3: Source
2, 4: Gate
5, 6, 7, 8: Drain
Start of commercial production
2012-05
1 2014-01-07
Rev.3.0
1 Page TPC8229-H
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±0.1 µA
Drain cut-off current
IDSS
VDS = 80 V, VGS = 0 V
10
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
80 V
Drain-source breakdown voltage (Note 7) V(BR)DSX ID = 10 mA, VGS = -20 V
60
Gate threshold voltage
Vth VDS = 10 V, ID = 0.1 mA
1.3 2.3
Drain-source on-resistance
RDS(ON) VGS = 4.5 V, ID = 1.6 A
58 87 mΩ
VGS = 10 V, ID = 1.6 A
53 80
Note 7: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Min Typ. Max Unit
640
pF
17
75
3.2 4.6 Ω
1.8 ns
7.0
1.9
18
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Qg
Qgs1
Qgd
QSW
VDD ≈ 64 V, VGS = 10 V, ID = 3.2 A
VDD ≈ 64 V, VGS = 5 V, ID = 3.2 A
VDD ≈ 64 V, VGS = 10 V, ID = 3.2 A
Min Typ. Max Unit
11 nC
5.4
2.0
1.5
2.4
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 8)
IDRP
Diode forward voltage
VDSF IDR = 3.2 A, VGS = 0 V
Note 8: Ensure that the channel temperature does not exceed 150 .
Min Typ. Max Unit
12.8 A
-1.2 V
3 2014-01-07
Rev.3.0
3Pages TPC8229-H
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
6
2014-01-07
Rev.3.0
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ TPC8229-H データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
TPC8229-H | MOSFET ( Transistor ) | Toshiba |