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PDF IRGP6690D-EPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGP6690D-EPbF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 600V
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 75A
Applications
• Welding
• H Bridge Converters
IRGP6690DPbF
IRGP6690D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
CC
C
G
E
n-channel
G
Gate
GCE
IRGP6690DPbF
TO-247AC
C
Collector
E
GC
IRGP6690D-EPbF
TO-247AD
E
Emitter
Features
Low VCE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive VCE (ON) temperature coefficient
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRGP6690DPBF
IRGP6690D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6690DPBF
IRGP6690D-EPBF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
ICM
Continuous Collector Current
Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current
VGE
PD @ TC = 25°C
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
140
90
225
300
45
±20
483
241
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.31
2.10
–––
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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June 17, 2014
1 page  
7
6 ICE = 37A
5
ICE = 75A
ICE = 150A
4
3
2
1
0
5
14
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
12
10
EON
8
6
4 EOFF
2
0
0 20 40 60 80 100 120 140 160
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V
12
10
EON
8
6 EOFF
4
2
0
0 20 40 60 80 100
Rg (Ω)
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
IRGP6690DPbF/IRGP6690D-EPbF
300
250 TJ = 25°C
TJ = 175°C
200
150
100
50
0
2 4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
0
20 40 60 80 100 120 140 160
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 400µH; VCE = 400V, RG = 10Ω; VGE = 15V
10000
1000
tdOFF
100
0
tR
tdON
10 20 30
RG (Ω)
tF
40 50
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 400µH; VCE = 400V, ICE = 75A; VGE = 15V
Submit Datasheet Feedback
June 17, 2014
5 Page 
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
IRGP6690DPbF/IRGP6690D-EPbF
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFPE30
135H
56 57
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 17, 2014
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IRGP6690D-EPbF.PDF ] | |
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