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TPC8058-H の電気的特性と機能

TPC8058-HのメーカーはToshiba Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 TPC8058-H
部品説明 MOSFET ( Transistor )
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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TPC8058-H Datasheet, TPC8058-H PDF,ピン配置, 機能
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1. Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate change: QSW = 12 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.2 m(typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TPC8058-H
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
18 A
Drain current (pulsed)
(Note 1)
IDP
72
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9 W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.0 W
Single-pulse avalanche energy
(Note 4)
EAS
421 mJ
Avalanche current
Channel temperature
IAR 18 A
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-07-29
Rev.1.0

1 Page





TPC8058-H pdf, ピン配列
6. Electrical Characteristics (Ta = 25unless otherwise specified)
6.1. Static Characteristics
TPC8058-H
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.5 mA
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 9 A
6.2. Dynamic Characteristics
Min Typ. Max Unit
  ±0.1 µA
  10
30   V
15  
1.3 2.3
3.2 4.0 m
2.5 3.2
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
rg
tr
ton
tf
toff
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Min Typ. Max Unit
3600 4300 pF
200 310
680
1.4 2.1
3.4 ns
13
6.7
47
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Qg
Qgs1
Qgd
QSW
VDD 24 V, VGS = 10 V, ID = 18 A
VDD 24 V, VGS = 5 V, ID = 18 A
VDD 24 V, VGS = 10 V, ID = 18 A
6.4. Source-Drain Characteristics
Characteristics
Symbol
Test Condition
Pulsed reverse drain current
(Note 5)
IDRP
Diode forward voltage
VDSF IDR = 18 A, VGS = 0 V
Note 5: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
51 nC
26
11
6.4
12
Min Typ. Max Unit
  72 A
  -1.2 V
3 2010-07-29
Rev.1.0


3Pages


TPC8058-H 電子部品, 半導体
TPC8058-H
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
6
2010-07-29
Rev.1.0

6 Page



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部品番号部品説明メーカ
TPC8058-H

MOSFET ( Transistor )

Toshiba Semiconductor
Toshiba Semiconductor


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