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TPC8058-HのメーカーはToshiba Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | TPC8058-H |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとTPC8058-Hダウンロード(pdfファイル)リンクがあります。 Total 9 pages
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1. Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate change: QSW = 12 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TPC8058-H
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
18 A
Drain current (pulsed)
(Note 1)
IDP
72
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9 W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.0 W
Single-pulse avalanche energy
(Note 4)
EAS
421 mJ
Avalanche current
Channel temperature
IAR 18 A
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-07-29
Rev.1.0
1 Page 6. Electrical Characteristics (Ta = 25 unless otherwise specified)
6.1. Static Characteristics
TPC8058-H
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.5 mA
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 9 A
6.2. Dynamic Characteristics
Min Typ. Max Unit
±0.1 µA
10
30 V
15
1.3 2.3
3.2 4.0 mΩ
2.5 3.2
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
rg
tr
ton
tf
toff
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Min Typ. Max Unit
3600 4300 pF
200 310
680
1.4 2.1 Ω
3.4 ns
13
6.7
47
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Qg
Qgs1
Qgd
QSW
VDD ≈ 24 V, VGS = 10 V, ID = 18 A
VDD ≈ 24 V, VGS = 5 V, ID = 18 A
VDD ≈ 24 V, VGS = 10 V, ID = 18 A
6.4. Source-Drain Characteristics
Characteristics
Symbol
Test Condition
Pulsed reverse drain current
(Note 5)
IDRP
Diode forward voltage
VDSF IDR = 18 A, VGS = 0 V
Note 5: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
51 nC
26
11
6.4
12
Min Typ. Max Unit
72 A
-1.2 V
3 2010-07-29
Rev.1.0
3Pages TPC8058-H
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Ta
(Guaranteed Maximum)
6
2010-07-29
Rev.1.0
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ TPC8058-H データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
TPC8058-H | MOSFET ( Transistor ) | Toshiba Semiconductor |