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HCTS11MS の電気的特性と機能

HCTS11MSのメーカーはIntersil Corporationです、この部品の機能は「Radiation Hardened Triple 3-Input AND Gate」です。


製品の詳細 ( Datasheet PDF )

部品番号 HCTS11MS
部品説明 Radiation Hardened Triple 3-Input AND Gate
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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HCTS11MS Datasheet, HCTS11MS PDF,ピン配置, 機能
HCTS11MS
November 1994
Radiation Hardened
Triple 3-Input AND Gate
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K or 1 Mega-RAD (Si)
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max.
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Pinouts
14 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
Description
The Intersil HCTS11MS is a Radiation Hardened Triple 3-
Input AND Gate. A high on all inputs forces the output to a
High state.
The HCTS11MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
14 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
A2
B2
C2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
C1
Y1
C3
B3
A3
Y3
Truth Table
INPUTS
OUTPUTS
An Bn Cn
Yn
LLL
L
L LH
L
LHL
L
L HH
L
HL L
L
HLH
L
HH L
L
HHH
H
NOTE: L = Logic Level Low, H = Logic level High
Functional Diagram
An
Bn
Cn
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com | Copyright © Intersil Corporation 1999
7-141
Yn
File Number 2409.1

1 Page





HCTS11MS pdf, ピン配列
Specifications HCTS11MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Input to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TPLH VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.
LIMITS
MIN MAX UNITS
2 18 ns
2 20 ns
2 20 ns
2 22 ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
Input Capacitance
CIN VCC = Open, f = 1MHz
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
NOTES
1
1
1
1
1
1
TEMPERATURE
+25oC
+125oC
+25oC
+125oC
+25oC
+125oC
MIN MAX
Typical 26
Typical 56
- 10
- 10
- 15
- 22
UNITS
pF
pF
pF
pF
ns
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V at 200K RAD,
VIL = 0.3V at 1M RAD (Note 3)
TEMP-
ERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
200K RAD
LIMITS
MIN MAX
- 0.2
4.0 -
-4.0 -
- 0.1
VCC
-0.1
-
- ±5
--
1M RAD
LIMITS
MIN MAX
- 1.0
4.0 -
-4.0 -
- 0.1
VCC
-0.1
-
- ±5
--
UNITS
mA
mA
mA
V
V
µA
-
7-143


3Pages


HCTS11MS 電子部品, 半導体
Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
2.20 x 2.24mm
METALLIZATION:
Type: SiAl
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
DIE ATTACH:
Material: Silver Epoxy
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCTS11MS
HCTS11MS
A1
VCC
C1
(1) (14) (13)
B1 (2)
A2 (3)
B2 (4)
C2 (5)
(6) (7) (8)
Y2 GND Y3
7-146
(12) Y1
(11) C3
(10) B3
(9) A3

6 Page



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部品番号部品説明メーカ
HCTS11MS

Radiation Hardened Triple 3-Input AND Gate

Intersil Corporation
Intersil Corporation


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