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IPD320N20N3G の電気的特性と機能

IPD320N20N3GのメーカーはInfineonです、この部品の機能は「Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPD320N20N3G
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 




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IPD320N20N3G Datasheet, IPD320N20N3G PDF,ピン配置, 機能
IPD320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPD320N20N3 G
200 V
32 mΩ
34 A
Package
Marking
PG-TO252-3
320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=34 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.2
page 1
Value
34
24
136
190
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-10-22

1 Page





IPD320N20N3G pdf, ピン配列
IPD320N20N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=17 A,
R G=1.6 Ω
-
-
-
-
-
-
-
1770
135
4
11
9
21
4
2350 pF
180
-
- ns
-
-
-
Q gs
Q gd
Q sw
Qg
V DD=100 V, I D=17 A,
V GS=0 to 10 V
V plateau
Q oss
V DD=100 V, V GS=0 V
-
-
-
-
-
-
8 - nC
3-
5-
22 29
4.4 - V
54 72 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=34 A,
T j=25 °C
t rr V R=100 V, I F=17A ,
Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 34 A
- - 136
- 1 1.2 V
- 110 - ns
- 500 - nC
Rev. 2.2
page 3
2009-10-22


3Pages


IPD320N20N3G 電子部品, 半導体
IPD320N20N3 G
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=34 A; V GS=10 V
100
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
80
60
98%
40
typ
20
3.5
900 µA
3
90 µA
2.5
2
1.5
1
0.5
0
-60 -20 20 60 100 140 180
T j [°C]
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103 Coss
Ciss
102
101 Crss
102
175 °C
25 °C
25°C, 98%
101
175°C, 98%
100
0 40 80 120 160
0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 2.2
page 6
2009-10-22

6 Page



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部品番号部品説明メーカ
IPD320N20N3G

Power-Transistor

Infineon
Infineon


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