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What is IPD30N08S2-22?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Power-Transistor".


IPD30N08S2-22 Datasheet PDF - Infineon

Part Number IPD30N08S2-22
Description Power-Transistor
Manufacturers Infineon 
Logo Infineon Logo 


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No Preview Available ! IPD30N08S2-22 datasheet, circuit

OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD30N08S2-22
Product Summary
V DS
R DS(on),max
ID
75 V
21.5 m
30 A
PG-TO252-3-11
Type
IPD30N08S2-22
Package
Marking
PG-TO252-3-11 2N0822
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
240
±20
136
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18

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IPD30N08S2-22 equivalent
IPD30N08S2-22
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
120
10 V
100
80
60
40
20
0
0246
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
7V
6.5 V
6V
90
5.5 V
6V
6.5 V
70 7 V
50
5.5 V
30
5V
8 10
10
0
10 V
20 40 60 80 100 120
I D [A]
8 Typ. Forward transconductance
g fs = f(I D); T j = 25°C
parameter: g fs
50
100
80
60
40
20
0
2
Rev. 1.0
25 °C
175 °C
-55 °C
3456
V GS [V]
40
30
20
10
0
70
page 5
10 20 30 40 50
I D [A]
2006-07-18


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPD30N08S2-22 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IPD30N08S2-22The function is Power-Transistor. InfineonInfineon

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