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NX3008CBKV の電気的特性と機能

NX3008CBKVのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 NX3008CBKV
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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NX3008CBKV Datasheet, NX3008CBKV PDF,ピン配置, 機能
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
TR1 (N-channel)
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
-
-8
[1] -
-
-
-
-30
8
-220
V
V
mA
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
TR1 (N-channel), Static characteristics
-
-8
[1] -
-
-
-
30 V
8V
400 mA
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA;
resistance
Tj = 25 °C
- 1 1.4
TR2 (P-channel), Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -200 mA; - 2.8 4.1
resistance
Tj = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

1 Page





NX3008CBKV pdf, ピン配列
NXP Semiconductors
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
TR1 (N-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Tsp = 25 °C
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp 10 µs
Tamb = 25 °C
Per device
Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
TR1 (N-channel), Source-drain diode
IS source current
TR2 (P-channel), Source-drain diode
IS source current
TR1 N-channel), ESD maximum rating
VESD
electrostatic discharge voltage
TR2 (P-channel), ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C
HBM
HBM
Min
-
-8
[1] -
[1] -
-
[2] -
[1] -
-
-
-8
[1] -
[1] -
-
[2] -
[1] -
-
[2] -
-55
-55
-65
[1] -
[1] -
[3] -
[3] -
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3] Measured between all pins.
Max Unit
-30
8
-220
-140
-0.9
330
390
1090
V
V
mA
mA
A
mW
mW
mW
30
8
400
260
1.6
330
390
1090
V
V
mA
mA
A
mW
mW
mW
500 mW
150 °C
150 °C
150 °C
400 mA
-220 mA
2000 V
2000 V
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
3 of 21


3Pages


NX3008CBKV 電子部品, 半導体
NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
017aaa064
1
103
102
FR4 PCB, standard footprint
101
1
10 102 103
tp (s)
Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa065
0 0.02
10 0.01
1
103
102
101
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008CBKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
6 of 21

6 Page



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部品番号部品説明メーカ
NX3008CBKS

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors
NX3008CBKV

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors


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