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PMCPB5530X の電気的特性と機能

PMCPB5530XのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 PMCPB5530X
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PMCPB5530X Datasheet, PMCPB5530X PDF,ピン配置, 機能
PMCPB5530X
20 V, complementary Trench MOSFET
Rev. 1 — 26 June 2012
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 3 A; Tj = 25 °C
resistance
- 26 34 m
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
resistance
- 55 70 m
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C
- - 20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t 5 s
[1] - - 5.3 A

1 Page





PMCPB5530X pdf, ピン配列
NXP Semiconductors
PMCPB5530X
20 V, complementary Trench MOSFET
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
ID
Parameter
drain current
IDM peak drain current
Ptot total power dissipation
Conditions
VGS = 4.5 V; Tamb = 25 °C; t 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp 10 µs
Tamb = 25 °C
TR1 (N-channel), Source-drain diode
IS source current
TR2 (P-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Tsp = 25 °C
Tamb = 25 °C
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp 10 µs
Tamb = 25 °C
TR2 (P-channel), Source-drain diode
IS
Per device
source current
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
[1]
[1]
[1]
[2]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-12
-
-
-
-
-
-
-
-
-55
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Max
5.3
4
2.6
12
490
1170
8330
Unit
A
A
A
A
mW
mW
mW
1.2 A
-20
12
-4.5
-3.4
-2.2
-14
490
1170
8330
V
V
A
A
A
A
mW
mW
mW
-1.2 A
150 °C
150 °C
150 °C
PMCPB5530X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 June 2012
© NXP B.V. 2012. All rights reserved.
3 of 18


3Pages


PMCPB5530X 電子部品, 半導体
NXP Semiconductors
PMCPB5530X
20 V, complementary Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 3 A; Tj = 25 °C
VGS = 4.5 V; ID = 3 A; Tj = 150 °C
VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C
VGS = 1.8 V; ID = 1.4 A; Tj = 25 °C
gfs transfer conductance VDS = 5 V; ID = 3 A; Tj = 25 °C
TR1 (N-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
td(on)
tr
turn-on delay time
rise time
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 ; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
TR1 (N-channel), Source-drain diode characteristics
VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
Min Typ Max Unit
20 - - V
0.4 0.65 0.9 V
- - 1 µA
- - 11 µA
- - 100 nA
- - 100 nA
- 26 34 m
- 49 63 m
- 33 46 m
- 50 69 m
- 12 - S
- 14.4 21.7 nC
- 1.1 - nC
- 1.5 - nC
- 660 - pF
- 87 - pF
- 74 - pF
- 4 - ns
- 15 - ns
- 40 - ns
- 16 - ns
- 0.8 1.2 V
-20 - - V
-0.47 -0.65 -0.9 V
- - -1 µA
- - -10 µA
- - -100 nA
- - -100 nA
PMCPB5530X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 June 2012
© NXP B.V. 2012. All rights reserved.
6 of 18

6 Page



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部品番号部品説明メーカ
PMCPB5530X

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors


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