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PDF PMN80XP Data sheet ( Hoja de datos )
| Número de pieza | PMN80XP | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMN80XP
20 V, single P-channel Trench MOSFET
Rev. 1 — 8 May 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
RDSon specified at 1.8 V operation
Trench MOSFET technology
Fast switching
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
Tamb = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
--
-12 -
[1] -
-
-20 V
12 V
-3.2 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C
resistance
- 80 102 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
S
017aaa257
1 page  
NXP Semiconductors
PMN80XP
20 V, single P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
1
0
017aaa530
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm2
10-1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
3.45
1.95
PMN80XP
20 V, single P-channel Trench MOSFET
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 19. Reflow soldering footprint for SOT457 (TSOP6)
5.3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 20. Wave soldering footprint for SOT457 (TSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PMN80XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2012
© NXP B.V. 2012. All rights reserved.
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