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PDF PMN70XPE Data sheet ( Hoja de datos )
| Número de pieza | PMN70XPE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMN70XPE
20 V, single P-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• 2 kV ESD protection
1.3 Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -4.1 A
- 70 85 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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1 page  
NXP Semiconductors
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0.01
0.02
0
PMN70XPE
20 V, single P-channel Trench MOSFET
017aaa649
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa650
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
10 0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tamb = 150 °C
PMN70XPE
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Typ Max Unit
-20 - - V
-0.75 -1
-1.25 V
- - -1 µA
- - -10 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
5.3
PMN70XPE
20 V, single P-channel Trench MOSFET
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig. 20. Wave soldering footprint for SOT457 (TSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMN70XPE v.1
20120705
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMN70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMN70XPE.PDF ] | |
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