DataSheet.jp

PMN48XP の電気的特性と機能

PMN48XPのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 PMN48XP
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




このページの下部にプレビューとPMN48XPダウンロード(pdfファイル)リンクがあります。

Total 15 pages

No Preview Available !

PMN48XP Datasheet, PMN48XP PDF,ピン配置, 機能
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low RDSon
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
--
-12 -
[1] -
-
-20 V
12 V
-4.1 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
resistance
- 48 55 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
S
017aaa094

1 Page





PMN48XP pdf, ピン配列
NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
75 25
25
75 125 175
Tj (°C)
0
75 25
25
75 125 175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMN48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 15


3Pages


PMN48XP 電子部品, 半導体
NXP Semiconductors
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = -250 µA; VGS = 0 V; Tj = 25 °C
ID = -250 µA; VDS = VGS; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C
VGS = -2.5 V; ID = -2 A; Tj = 25 °C
VDS = -5 V; ID = -2.4 A; Tj = 25 °C
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
VDS = -10 V; VGS = -5 V; RG(ext) = 6 ;
Tj = 25 °C; ID = -1 A
IS = -2.4 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 -
-0.75 -1
--
--
--
- 48
- 70
- 72
- 10
-V
-1.25 V
-1 µA
-10 µA
-100 nA
55 m
80 m
82 m
-S
- 8.7 13 nC
- 1.8 - nC
- 1.7 - nC
- 1000 - pF
- 130 - pF
- 90 - pF
- 15 - ns
- 22 - ns
- 51 - ns
- 22 - ns
-
-0.75 -1
V
PMN48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
6 of 15

6 Page



ページ 合計 : 15 ページ
 
PDF
ダウンロード
[ PMN48XP データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
PMN48XP

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap