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PMN40UPE の電気的特性と機能

PMN40UPEのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 PMN40UPE
部品説明 MOSFET ( Transistor )
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PMN40UPE Datasheet, PMN40UPE PDF,ピン配置, 機能
PMN40UPE
20 V, single P-channel Trench MOSFET
13 August 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Fast switching
Trench MOSFET technology
4 kV ESD protection
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-8 -
8V
[1] - - -6 A
- 37 43 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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PMN40UPE pdf, ピン配列
NXP Semiconductors
PMN40UPE
20 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tamb = 25 °C
ESD maximum rating
VESD
electrostatic discharge voltage HBM
Min Max Unit
-55 150 °C
-55 150 °C
-65 150 °C
[1] -
-1.3 A
[3] -
4000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMN40UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 August 2012
© NXP B.V. 2012. All rights reserved
3 / 14


3Pages


PMN40UPE 電子部品, 半導体
NXP Semiconductors
PMN40UPE
20 V, single P-channel Trench MOSFET
Symbol
IGSS
RDSon
Parameter
gate leakage current
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS gate-source charge
QGD gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 150 °C
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
VGS = -1.8 V; ID = -3 A; Tj = 25 °C
VDS = -10 V; ID = -4 A; Tj = 25 °C
VDS = -10 V; ID = -4.4 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -4 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
- - -10 µA
- - -10 µA
- 37 43 mΩ
- 51 59 mΩ
- 45 55 mΩ
- 59 72 mΩ
- 15 - S
-
15.6 23
nC
- 2.5 - nC
- 2.8 - nC
- 1820 - pF
- 207 - pF
- 146 - pF
- 8 - ns
- 21 - ns
- 50 - ns
- 34 - ns
- -0.7 -1.2 V
PMN40UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 August 2012
© NXP B.V. 2012. All rights reserved
6 / 14

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共有リンク

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部品番号部品説明メーカ
PMN40UPE

MOSFET ( Transistor )

NXP Semiconductors
NXP Semiconductors
PMN40UPEA

single P-channel Trench MOSFET

NXP Semiconductors
NXP Semiconductors


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