|
|
PDF PMV50UPE Data sheet ( Hoja de datos )
| Número de pieza | PMV50UPE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMV50UPE (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
PMV50UPE
20 V, single P-channel Trench MOSFET
20 July 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• 3 kV ESD protected
• Trench MOSFET technology
• Low threshold voltage
1.3 Applications
• Relay driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C
resistance
- 50 66 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
PMV50UPE
20 V, single P-channel Trench MOSFET
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
10 0.05 0.02
0
0.01
017aaa692
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa693
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.5
0.33 0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
PMV50UPE
All information provided in this document is subject to legal disclaimers.
Product data sheet
20 July 2012
Min Typ Max Unit
-20 - - V
-0.47 -0.6 -0.9 V
- - -1 µA
- - -10 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMV50UPE v.1
20120720
PMV50UPE
20 V, single P-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMV50UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 July 2012
© NXP B.V. 2012. All rights reserved
11 / 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PMV50UPE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMV50UPE | MOSFET ( Transistor ) | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |