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PMV48XPのメーカーはNXP Semiconductorsです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | PMV48XP |
| |
部品説明 | MOSFET ( Transistor ) | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとPMV48XPダウンロード(pdfファイル)リンクがあります。 Total 15 pages
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tamb = 25 °C
voltage
- - -20 V
VGS gate-source
voltage
-12 -
12 V
ID drain current
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = -4.5 V; Tamb = 25 °C
[1] -
VGS = -4.5 V; ID = -2.4 A;
pulsed; tp ≤ 300 µs; δ ≤ 0.01;
Tj = 25 °C
-
- -3.5 A
48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
1 Page NXP Semiconductors
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tamb = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
IDM peak drain current
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -20 V
-12 12 V
- -3.5 A
- -2.2 A
- -14 A
- 510 mW
- 930 mW
- 4150 mW
- 150 °C
-55 150 °C
-65 150 °C
- -1 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
Pder
(%)
80
017aaa123
120
Ider
(%)
80
017aaa124
40 40
0
−75 −25
25
75 125 175
Tj (°C)
0
−75 −25
25
75 125 175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMV48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
3 of 15
3Pages NXP Semiconductors
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = -250 µA; VGS = 0 V; Tj = 25 °C
ID = -250 µA; VDS = VGS; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tamb = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C
VGS = -2.5 V; ID = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
VDS = -12 V; ID = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
IS = -2.4 A; VGS = 0 V; Tj = 25 °C;
tp ≤ 300 µs; δ ≤ 0.01
Min Typ Max Unit
-20 -
-0.75 -1
--
--
- 48
- 70
- 71
- 12
-V
-1.25 V
-1
-100
55
µA
nA
mΩ
80 mΩ
81 mΩ
-S
-
8.5 11
nC
- 1.8 - nC
- 1.8 - nC
- 1000 - pF
- 130 - pF
- 90 - pF
- 11 - ns
- 13 - ns
- 61 - ns
- 23 - ns
- -0.82 -1.2 V
PMV48XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 December 2010
© NXP B.V. 2010. All rights reserved.
6 of 15
6 Page | |||
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部品番号 | 部品説明 | メーカ |
PMV48XP | MOSFET ( Transistor ) | NXP Semiconductors |
PMV48XPA | P-channel Trench MOSFET | NXP Semiconductors |