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PDF PMDT670UPE Data sheet ( Hoja de datos )
| Número de pieza | PMDT670UPE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
RDSon
drain-source on-state VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
resistance
[1]
Min Typ Max Unit
--
-8 -
--
-20 V
8V
-550 mA
- 0.67 0.85 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
017aaa064
1
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa065
0 0.02
10 0.01
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDT670UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 6 leads
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
SOT666
DA
EX
S YS
65 4
HE
pin 1 index
12
e1 bp
e
3
wM A
A
detail X
c
Lp
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A bp c D E
e e1 HE Lp
mm
0.6 0.27 0.18 1.7
0.5 0.17 0.08 1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
wy
0.1 0.1
OUTLINE
VERSION
SOT666
IEC
Fig 18. Package outline SOT666
PMDT670UPE
Product data sheet
REFERENCES
JEDEC
JEITA
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
© NXP B.V. 2011. All rights reserved.
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