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PMK35EPのメーカーはNXP Semiconductorsです、この部品の機能は「P-channel TrenchMOS extremely low level FET」です。 |
部品番号 | PMK35EP |
| |
部品説明 | P-channel TrenchMOS extremely low level FET | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとPMK35EPダウンロード(pdfファイル)リンクがあります。 Total 12 pages
PMK35EP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 29 April 2010
Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
Battery management
Load switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
25 °C ≤ Tj ≤ 150 °C
voltage
ID
drain current
Tsp = 25 °C; VGS = -10 V; see
Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = -10 V; ID = -9.2 A;
Tj = 25 °C; see Figure 9
Dynamic characteristics
QGD
gate-drain charge VGS = -10 V; ID = -9.2 A;
VDS = -15 V; Tj = 25 °C;
see Figure 11; see Figure 12
Min Typ Max Unit
- - -30 V
- - -14. A
9
- - 6.9 W
- 16 19 mΩ
- 6 - nC
1 Page NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
120
Ider
(%)
80
003aab604
120
Pder
(%)
80
003aab948
40 40
0
0 50 100 150 200
Tj (°C)
0
0 50 100 150 200
Tsp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
−102
ID
(A)
−10
Limit RDSon = VDS / ID
Fig 2. Normalized total power dissipation as a
function of solder point temperature
003aab603
tp = 10 μs
1 ms
10 ms
DC
−1
100 ms
−10−1
−10−1
−1
−10 −102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
Conditions
see Figure 4
Min Typ Max Unit
- - 18 K/W
PMK35EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
3 of 12
3Pages NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
−4
VGS(th)
(V)
−3
−2
−1
max.
typ.
min.
003aab613
−10−3
ID
(A)
−10−4
−10−5
003aab612
min. typ.
max.
0
−60 0
60 120 180
Tj (°C)
ID = -1 mA; VDS = VGS
Fig 7. Gate-source threshold voltage as a function of
junction temperature
−10−6
0
−1 −2 −3 −4
VGS (V)
Tj = 25 °C; VDS = -5 V
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
2
a
1.5
003aab614
100
RDSon
(mΩ)
75
VGS (V) = −3
−3.5
003aab607
1
0.5
0
−60 0
60 120 180
Tj (°C)
50
25
0
0 −10
Tj = 25 °C
−4
−4.5
−5
−20 −30
ID (A)
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
PMK35EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
6 of 12
6 Page | |||
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部品番号 | 部品説明 | メーカ |
PMK35EP | P-channel TrenchMOS extremely low level FET | NXP Semiconductors |