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PDF PMR670UPE Data sheet ( Hoja de datos )
| Número de pieza | PMR670UPE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMR670UPE
20 V, 480 mA P-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
[1]
Min
-
-8
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Typ Max Unit
- -20 V
- 8V
- -480 mA
0.67 0.85 Ω
1 page  
NXP Semiconductors
PMR670UPE
20 V, 480 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1] -
440 510 K/W
[2] -
360 415 K/W
- - 160 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0 0.02
10 0.01
017aaa031
1
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa032
10
0
0.02
0.01
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMR670UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
DB
PMR670UPE
20 V, 480 mA P-channel Trench MOSFET
SOT416
E AX
vM A
HE
3
1
e1 bp
e
2
wM B
Q
A
A1
Lp
detail X
c
0 0.5 1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1 HE Lp Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT416
IEC
REFERENCES
JEDEC
JEITA
SC-75
Fig 18. Package outline SOT416 (SC-75)
PMR670UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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